参数资料
型号: 2SB1270-S
元件分类: 功率晶体管
英文描述: 5 A, 80 V, PNP, Si, POWER TRANSISTOR
封装: TO-220MF, 3 PIN
文件页数: 1/4页
文件大小: 50K
代理商: 2SB1270-S
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Type Silicon Transistors
High-Current Switching Applications
Ordering number:ENN2266A
2SB1270/2SD1906
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10904TN (KT)/O1598HA (KT)/D251MH/4097TA, TS No.2266–1/4
Package Dimensions
unit:mm
2049C
[2SB1270/2SD1906]
C
Electrical Characteristics at Ta = 25C
Applications
Suitable for relay drivers, high-speed inverters,
converters, and other general high-current switching
applications.
Features
Suitable for sets whose height is restricted.
Low collector to emitter saturation voltage.
Large current capacity.
( ) : 2SB1270
Specifications
Absolute Maximum Ratings at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220MF
Tc=25C
* : The 2SB1270/2SD1906 are classified by 1A hFE as follows :
Continued on next page.
k
n
a
RQ
R
S
h E
F
0
4
1
o
t
0
70
0
2
o
t
0
10
8
2
o
t
0
4
1
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
0
9
)
(V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
8
)
(V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
6
)
(V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
5
)
(A
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
9
)
(A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
5
6
.
1W
0
3W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
8
)
(
=
E 0
=1
.
0
)
(A
m
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
4
)
(
=
C 0
=1
.
0
)
(A
m
n
i
a
G
t
n
e
r
u
C
D
h E
F 1V E
C
I
,
V
2
)
(
=
C
A
1
)
(
=
*
0
7*
0
8
2
h E
F 2V E
C
I
,
V
2
)
(
=
C
A
3
)
(
=
0
3
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
-
n
i
a
GfT
V E
C
I
,
V
5
)
(
=
C
A
1
)
(
=
0
2z
H
M
10.2
20.9
11.5
9.4
0.8
1.6
1.2
0.9
11.0
8.8
4.5
1.3
0.4
2.55
2.7
12
3
相关PDF资料
PDF描述
2SD1906-R 5 A, 80 V, NPN, Si, POWER TRANSISTOR
2SB1270Q 5 A, 80 V, PNP, Si, POWER TRANSISTOR
2SB1270 5 A, 80 V, PNP, Si, POWER TRANSISTOR
2SD1906-S 5 A, 80 V, NPN, Si, POWER TRANSISTOR
2SB1270-S 5 A, 80 V, PNP, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
2SB1274 制造商:n/a 功能描述:2SB1274 N9H1D
2SB1274R 功能描述:TRANS PNP 60V 3A TO-220ML RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
2SB1274S 功能描述:TRANS PNP 60V 3A TO-220ML RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
2SB1275TLP 功能描述:两极晶体管 - BJT PNP 160V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SB1278 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANSISTOR FTL -80V -.7A .75W ECB