参数资料
型号: 2SB1288P
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: ROHS COMPLIANT, TO-92L-A1, 3 PIN
文件页数: 2/3页
文件大小: 236K
代理商: 2SB1288P
2SB1288
2
SJC00075BED
VCE(sat) IC
hFE IC
fT IE
PC Ta
IC VCE
IC VBE
Cob VCB
Safe operation area
0
160
40
120
80
0
1.2
1.0
0.8
0.6
0.4
0.2
Collector
power
dissipation
P
C
(W
)
Ambient temperature T
a (°C)
0
12
10
8
2
6
4
0
6
5
4
3
2
1
Ta
= 25°C
35 mA
30 mA
25 mA
20 mA
15 mA
10 mA
5 mA
1 mA
IB
= 40 mA
Collector
current
I
C
(A
)
Collector-emitter voltage V
CE (V)
0
2.0
1.6
0.4
1.2
0.8
0
12
10
8
6
4
2
VCE
= 2 V
Ta
= 75°C
25°C
25
°C
Base-emitter voltage V
BE (V)
Collector
current
I
C
(A
)
0.01
0.1
1
10
0.01
0.1
1
10
100
IC / IB
= 30
Ta
= 75°C
25
°C
25°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (A)
0.01
0.1
1
10
0
600
500
400
300
200
100
VCE
= 2 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
1
10
100
0
240
200
160
120
80
40
VCB
= 6 V
Ta
= 25°C
Transition
frequency
f
T
(MHz
)
Emitter current I
E (mA)
1
10
100
0
200
160
120
80
40
IE
= 0
f
= 1 MHz
Ta
= 25°C
Collector-base voltage V
CB (V)
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
0.1
1
10
100
0.01
0.1
1
10
100
Single pulse
Ta
= 25°C
t
= 10 ms
t
= 1 s
ICP
IC
Collector
current
I
C
(A
)
Collector-emitter voltage V
CE (V)
This product complies with the RoHS Directive (EU 2002/95/EC).
相关PDF资料
PDF描述
2SB1290/D 7 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220FP
2SB1290 7 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220FP
2SB1290D 7 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220FP
2SB1301-T2 3000 mA, 16 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1301-T2ZR 3000 mA, 16 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SB1290 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB1295 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTORSC-59 -15V -.8A .2WSURFACE MOUNT
2SB12990P 功能描述:TRANS PNP 60VCEO 3A TO-220F RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
2SB1299P 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB1301-T2 制造商:NEC Electronics Corporation 功能描述: