参数资料
型号: 2SB1322R
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: ROHS COMPLIANT, MT-2-A1, 3 PIN
文件页数: 1/3页
文件大小: 246K
代理商: 2SB1322R
Power Transistors
Publication date : October 2008
SJD00351AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1322
Silicon PNP epitaxial planar type
For low frequency power amplication
Complementary to 2SD1994
Features
Allowing supply with the radial taping
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–30
V
Collector-emitter voltage (Base open)
VCEO
–25
V
Emitter-base voltage (Collector open)
VEBO
–5
V
Collector current
IC
–1
A
Peak collector current
ICP
–1.5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 mA, IE = 0
–30
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–25
V
Emitter-base voltage (Collector open)
VEBO
IE = –10 mA, IC = 0
–5
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –20 V, IE = 0
– 0.1
m
A
Forward current transfer ratio *1
hFE1*2 VCE = –10 V, IC = –500 mA
85
340
hFE2
VCE = –5 V, IC = –1 mA
50
Collector-emitter saturation voltage *1
VCE(sat) IC = –500 mA, IB = –50 mA
– 0.4
V
Base-emitter saturation voltage *1
VBE(sat) IC = –500 mA, IB = –50 mA
–1.2
V
Transition frequency
fT
VCB = –10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = –10 V, IE = 0, f = 1 MHz
20
30
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classication
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Package
Code
MT-2-A1
Pin Name
1. Emitter
2. Collector
3. Base
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料
PDF描述
2SB1322 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1322Q 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1330T105R 0.7 A, 80 V, PNP, Si, POWER TRANSISTOR
2SB1330T105/Q 0.7 A, 80 V, PNP, Si, POWER TRANSISTOR
2SB1330T105P 0.7 A, 80 V, PNP, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
2SB1324-TD-E 制造商:SANYO 功能描述:omo 30V 3A 70 to PCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 30V 3A SOT89 制造商:Sanyo 功能描述:0
2SB1325-TD-E 制造商:SANYO 功能描述:omo 20V 4A 70 to PCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 20V 4A SOT89 制造商:Sanyo 功能描述:0
2SB1326TV2Q 功能描述:两极晶体管 - BJT PNP 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SB1326TV2R 功能描述:两极晶体管 - BJT PNP 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SB1333 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR