参数资料
型号: 2SB1401
元件分类: 功率晶体管
英文描述: 0.3 A, 300 V, PNP, Si, POWER TRANSISTOR
封装: TO-220FM, 3 PIN
文件页数: 2/5页
文件大小: 29K
代理商: 2SB1401
2SB1401
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–300
V
Collector to emitter voltage
V
CEO
–300
V
Emitter to base voltage
V
EBO
–7
V
Collector current
I
C
–0.3
A
Collector peak current
I
C(peak)
–0.6
A
Collector power dissipation
P
C
2W
P
C*
1
15
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–300
V
I
C = –1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–300
V
I
C = –10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–7
V
I
E = –1 mA, IC = 0
Collector cutoff current
I
CBO
–10
AV
CB = –300 V, IE = 0
I
CEO
–10
V
CE = –60 V, RBE = ∞
I
EBO
–10
V
EB = –5 V, IC = 0
DC current transfer ratio
h
FE1
1000
V
CE = –1.5 V, IC = –20 mA*
1
h
FE2
1500
V
CE = –1.5 V, IC = –100 mA*
1
Collector to emitter saturation
voltage
V
CE(sat)
–1.5
V
I
C = –100 mA, IB = –0.2 mA*
1
Base to emitter saturation
voltage
V
BE(sat)
–2.0
V
I
C = –100 mA, IB = –0.2 mA*
1
Note:
1. Pulse test.
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2SB1403 6 A, 120 V, PNP, Si, POWER TRANSISTOR
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