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参数资料
| 型号： | 2SB1418Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, MT-4-A1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 241K |
| 代理商： | 2SB1418Q |
Power Transistors
1
Publication date: March 2003
SJD00073BED
2SB1418, 2SB1418A
Silicon PNP epitaxial planar type darlington
For power amplification
Complementary to 2SD2138 and 2SD2138A
■ Features
High forward current transfer ratio h
FE
High-speed switching
Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB1418
VCBO
60
V
(Emitter open)
2SB1418A
80
Collector-emitter voltage 2SB1418
VCEO
60
V
(Base open)
2SB1418A
80
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
2A
Peak collector current
ICP
4A
Collector power dissipation
PC
15
W
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB1418
VCEO
IC = 30 mA, IB = 0
60
V
(Base open)
2SB1418A
80
Base-emitter voltage
VBE
VCE = 4 V, IC = 2 A
2.8
V
Collector-base cutoff
2SB1418
ICBO
VCB = 60 V, IE = 0
100
A
current (Emitter open)
2SB1418A
VCB
= 80 V, I
E
= 0
100
Collector-emitter cutoff
2SB1418
ICEO
VCE = 30 V, IB = 0
100
A
current (Base open)
2SB1418A
VCE = 40 V, IB = 0
100
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 5 V, I
C
= 0
100
A
Forward current transfer ratio
hFE1
VCE = 4 V, IC = 1 A
1 000
hFE2 *
VCE = 4 V, IC = 2 A
1 000
10 000
Collector-emitter saturation voltage
VCE(sat)
IC
= 2 A, I
B
= 8 mA
2.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC = 2 A, IB1 = 8 mA, IB2 = 8 mA
0.2
s
Turn-off time
toff
VCC
= 50 V
2
s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
1 000 to 2 500
2 000 to 5 000 4 000 to 10 000
Internal Connection
B
C
E
Unit: mm
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
10.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
123
0.65±0.1
1.2±0.1
1.48±0.2
2.25±0.2
C 1.0
0.55±0.1
2.5±0.2
1.05±0.1
13.0
±
0.2
4.2
±
0.2
18.0
±
0.5
Solder
Dip
5.0±0.1
2.5
±
0.1
90
1.0
±0.2
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
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| 2SB1420 | 制造商:Sanken Electric Co Ltd 功能描述:Box 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP DARL 120V 16A TO3P |
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| 2SB1424T100R | 功能描述:两极晶体管 - BJT PNP 20V 3A MPT3 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1427 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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