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参数资料
| 型号： | 2SB1432-AZ |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封装： | ISOLATED TO-220, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 106K |
| 代理商： | 2SB1432-AZ |
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1998
Document No. D14859EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB1432
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SB1432 is a Darlington power transistor that can be directly
driven from the output of an IC. This transistor is ideal for OA and FA
equipment such as motor and solenoid drivers.
In
addition,
a
small
resin-molded
insulation
type
package
contributes to high-density mounting and reduction of mounting cost.
FEATURES
High hFE due to Darlington connection
hFE
≥ 1,000 @VCE = 2.0 V, IC = 10 A)
Mold package that does not require an insulation board or insulation
bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
8.0
V
Collector current (DC)
IC(DC)
–
+10
A
Collector current (pulse)
IC(pulse)
PW
≤ 300
s,
duty cycle
≤ 10%
–
+20
A
Base current (DC)
IB(DC)
1.0
A
TC = 25
°C
30
W
Total power dissipation
PT
TA = 25
°C
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
ORDERING INFORMATION
Part No.
Package
2SB1432
Isolated TO-220
(Isolated TO-220)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
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PDF描述 |
|---|---|
| 2SB1432 | 10 A, 100 V, PNP, Si, POWER TRANSISTOR |
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| 2SB1386T100 | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1436/R | 5 A, 20 V, PNP, Si, POWER TRANSISTOR, TO-126FP |
| 2SB1443TV2Q | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1432-AZ(L) | 制造商:Renesas Electronics 功能描述:PNP |
| 2SB1432-AZ-K | 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SB143400A | 功能描述:TRANS PNP LF AMP 50VCEO MT-2 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB14350RA | 功能描述:TRANS PNP 50VCEO 2A MT-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB1438 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTORSUB:2SA1315 |
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