参数资料
型号: 2SB1452
元件分类: 功率晶体管
英文描述: 7 A, 80 V, PNP, Si, POWER TRANSISTOR
封装: SMP-FD, 3 PIN
文件页数: 1/4页
文件大小: 43K
代理商: 2SB1452
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
80V/7A Switching Applications
Ordering number:ENN3152
2SB1452/2SD2201
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42804TN (PC)/N1098HA (KT)/7039MO, TS No.3152–1/4
10.2
1.2
2.55
4.5
0 to 0.3
0.4
1.3
9.9
3.0
2.7
1.35
8.8
1.4
1.5max
0.8
12
3
Package Dimensions
unit:mm
2069C
[2SB1452/2SD2201]
Features
Surface mount type device making the following
possible.
-Reduction in the number of manufacturing pro-
cesses for 2SB1452/2SD2201-applied equipment.
-High density surface mount applications.
-Small size of 2SB1452/2SD2201-applied equip-
ment.
Low collector-to-emitter saturation voltage.
Large current capacity.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
( ) : 2SB1452
Specifications
Absolute Maximum Ratings at Ta = 25C
* : The 2SB1452/2SD2201 are classified by 1A hFE as follows :
Continued on next page.
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相关PDF资料
PDF描述
2SB1452S 7 A, 80 V, PNP, Si, POWER TRANSISTOR
2SD2201S 7 A, 80 V, NPN, Si, POWER TRANSISTOR
2SB1452-R 7 A, 80 V, PNP, Si, POWER TRANSISTOR
2SB1452R 7 A, 80 V, PNP, Si, POWER TRANSISTOR
2SB1455-Q 7 A, 80 V, PNP, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
2SB1453-K-AZ 制造商:Renesas Electronics Corporation 功能描述:
2SB1457(T6CANO,F,M 功能描述:TRANS PNP 2A 100V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极(Ic)(最大值):2A 电压 - 集射极击穿(最大值):100V 不同?Ib,Ic 时的?Vce 饱和值(最大值):1.5V @ 1mA,1A 电流 - 集电极截止(最大值):10μA(ICBO) 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):2000 @ 1A,2V 功率 - 最大值:900mW 频率 - 跃迁:50MHz 工作温度:150°C(TJ) 安装类型:通孔 封装/外壳:TO-226-3,TO-92-3 长体 供应商器件封装:TO-92MOD 标准包装:1
2SB1457(T6CNO,A,F) 功能描述:TRANS PNP 2A 100V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极(Ic)(最大值):2A 电压 - 集射极击穿(最大值):100V 不同?Ib,Ic 时的?Vce 饱和值(最大值):1.5V @ 1mA,1A 电流 - 集电极截止(最大值):10μA(ICBO) 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):2000 @ 1A,2V 功率 - 最大值:900mW 频率 - 跃迁:50MHz 工作温度:150°C(TJ) 安装类型:通孔 封装/外壳:TO-226-3,TO-92-3 长体 供应商器件封装:TO-92MOD 标准包装:1
2SB1457(T6DW,F,M) 功能描述:TRANS PNP 2A 100V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极(Ic)(最大值):2A 电压 - 集射极击穿(最大值):100V 不同?Ib,Ic 时的?Vce 饱和值(最大值):1.5V @ 1mA,1A 电流 - 集电极截止(最大值):10μA(ICBO) 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):2000 @ 1A,2V 功率 - 最大值:900mW 频率 - 跃迁:50MHz 工作温度:150°C(TJ) 安装类型:通孔 封装/外壳:TO-226-3,TO-92-3 长体 供应商器件封装:TO-92MOD 标准包装:1
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