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参数资料
| 型号： | 2SB1467-Q |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 30 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-220ML, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 37K |
| 代理商： | 2SB1467-Q |
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2004. Specifications and information herein are subject to
change without notice.
2SB1467/2SD2218
PS No.3363–4/4
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2SB1467 / 2SD2218
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PDF描述 |
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| 2SB1467-S | 8 A, 30 V, PNP, Si, POWER TRANSISTOR |
| 2SD2228-T2 | 500 mA, 16 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2228D44-T2-A | 500 mA, 16 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2228D43-T2-A | 500 mA, 16 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2228D42-T2 | 500 mA, 16 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1472-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL PNP 60V 7A TO-220MF |
| 2SB1474TL | 功能描述:达林顿晶体管 DARL PNP 80V 4A RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2SB1481(Q) | 制造商:Toshiba 功能描述:PNP -100V -4A 2000 TO220NIS 制造商:Toshiba 功能描述:PNP -100V -4A 2000 TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:Semi, Bipolar, Transistor, PNP, Power, D |
| 2SB1481(TOJS,Q,M) | 功能描述:TRANS PNP 4A 100V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:4A 电压 - 集射极击穿（最大值）:100V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:1.5V @ 6mA，3A 电流 - 集电极截止（最大值）:2μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:2000 @ 3A，2V 功率 - 最大值:2W 频率 - 跃迁:- 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商器件封装:TO-220NIS 标准包装:1 |
| 2SB14880PA | 功能描述:TRANS PNP 400VCEO 500MA MT-2 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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