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参数资料
| 型号： | 2SB1508R |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 48K |
| 代理商： | 2SB1508R |
2SB1508 / 2SD2281
No.3714-1/4
Applications
Relay drivers, high-speed inverters, converters.
Features
Low collector-to-emitter saturation voltage: VCE(sat)=--0.5V (PNP), 0.4V (NPN) max.
Wide ASO and highly registant to breakdown.
Micaless package facilitating easy mounting.
Specifications ( ) : 2SB1508
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)60
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)12
A
Collector Current (Pulse)
ICP
(--)25
A
Collector Dissipation
PC
3.0
W
Tc=25°C45
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
mA
DC Current Gain
hFE1VCE=(--)2V, IC=(--)1A
70*
280*
hFE2VCE=(--)2V, IC=(--)5A
30
Gain-Bandwidth Product
fT
VCE=(--)5V, IC=(--)1A
10
MHz
Continued on next page.
* : The 2SBB1508 / 2SD2281 are classified by 1A hFE as follows :
Rank
Q
R
S
hFE
70 to 140
100 to 200
140 to 280
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN3714A
D0606FA TI IM TC-00000359 / N1098HA (KT) / 5111MH, JK (KOTO)
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SB1508 / 2SD2281
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Switching
Applications
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB1508 | 12 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 2SD2281R | 12 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SB1508Q | 12 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 2SD2281 | 12 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SB1508S | 12 A, 50 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1548 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR SUBBING WITH 2SB1548A-P |
| 2SB1548A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1548AP | 功能描述:TRANS PNP LF 80VCEO 3A TO-220D RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB1548A-P | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1548PQAU | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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