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参数资料
| 型号： | 2SB1529S |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 180 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TOP3L, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 172K |
| 代理商： | 2SB1529S |
2
Power Transistors
2SB1529
PC —Ta
IC —VCE
IC —VBE
VCE(sat) —IC
hFE —IC
fT —IC
Cob —VCB
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
200
160
120
80
40
180
140
100
60
20
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) Without heat sink
(P
C=3.5W)
(1)
(3)
(2)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
0
–16
–4
–12
–8
–14
–2
–10
–6
0
–16
–12
–4
–10
–14
–8
–2
–6
T
C=25C
–180mA
–160mA
–140mA
–120mA
–100mA
–80mA
–60mA
–40mA
–20mA
I
B=–200mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
0–6
–5
–4
–1
–3
–2
0
–20
–16
–12
–8
–4
V
CE=–5V
125C
–25C
T
C=25C
Base to emitter voltage V
BE
(V)
Collector
current
I
C
(A
)
– 0.1
–1
–10
–100
– 0.3
–3
–30
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C/IB=10
25C
T
C=125C
–25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
– 0.1
–1
–10
– 0.03
– 0.3
–3
1
3
10
30
100
300
1000
3000
10000
V
CE=–5V
T
C=125C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
0.1
0.3
1
3
10
30
100
300
1000
V
CE=–5V
f=1MHz
T
C=25C
Collector current I
C
(A)
Transition
frequency
f
T
(MHz
)
–1
–10
–100
–1000
–3
–30
–300
10
102
103
104
105
I
E=0
f=1MHz
T
C=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
CP
I
C
100ms
t=10ms
Non repetitive pulse
T
C=25C
DC
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1548 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR SUBBING WITH 2SB1548A-P |
| 2SB1548A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1548AP | 功能描述:TRANS PNP LF 80VCEO 3A TO-220D RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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