2001
PNP SILICON EPITAXIAL TRANSISTOR
2SB1571
PNP SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No.
D15930EJ2V0DS00 (2nd edition)
Date Published
December 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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availability and additional information.
FEATURES
Low VCE(sat): VCE(sat)1 ≤ 0.35 V
Complementary to 2SD2402
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
50
V
Collector to Emitter Voltage
VCEO
30
V
Emitter to Base Voltage
VEBO
6.0
V
Collector Current (DC)
IC(DC)
5.0
A
Collector Current (pulse)
Note1
IC(pulse)
8.0
A
Base Current (DC)
IB(DC)
0.2
A
Base Current (pulse)
Note1
IB(pulse)
0.4
A
Total Power Dissipation
Note2
PT
2.0
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
–55 to + 150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 16 cm
2 x 0.7 mm
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB =
50 V, IE = 0
100
nA
Emitter Cut-off Current
IEBO
VEB =
6.0 V, IC = 0
100
nA
DC Current Gain
Note
hFE1
VCE =
1.0 V, IC = 1.0 A
80
hFE2
VCE =
1.0 V, IC = 2.0 A
100
200
400
Base to Emitter Voltage
Note
VBE
VCE =
1.0 V, IC = 0.1 A
0.6
0.665
0.7
V
Collector Saturation Voltage
Note
VCE(sat)1
IC =
3.0 A, IB = 0.15 A
0.17
0.35
V
Collector Saturation Voltage
Note
VCE(sat)2
IC =
5.0 A, IB = 0.25 A
0.28
0.55
V
Base Saturation Voltage
Note
VBE(sat)
IC =
3.0 A, IB = 0.15 A
0.89
1.2
V
Gain Bandwidth Product
fT
VCE =
10 V, IE = 0.5 A
150
MHz
Output Capacitance
Cob
VCB =
10 V, IE = 0, f = 1.0 MHz
100
pF
Turn-on Time
ton
IC =
2.0 A, VCC = 10 V,
265
ns
Storage Time
tstg
RL = 5.0
, IB1 = IB2 = 0.1 A,
350
ns
Fall Time
tf
50
ns
Note Pulsed: PW
≤ 350
s, Duty Cycle ≤ 2%
hFE CLASSFICATION
Marking
HX
HY
HZ
hFE2
100 to 200
160 to 320
200 to 400
PACKAGE DRAWING (Unit: mm)
1.6±0.2
4.5±0.1
0.42
±0.06
0.8
MIN.
1.5
0.42
±0.06
0.47
±0.06
3.0
2.5±0.1
4.0±0.25
0.41
+0.03
–0.05
1.5±0.1
E
C
B
E: Emitter
C: Collector (Fin)
B: Base