参数资料
型号: 2SB1572-HY
元件分类: 功率晶体管
英文描述: 3 A, 60 V, PNP, Si, POWER TRANSISTOR
文件页数: 1/6页
文件大小: 171K
代理商: 2SB1572-HY
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
相关PDF资料
PDF描述
2SB1572-HX 3 A, 60 V, PNP, Si, POWER TRANSISTOR
2SB1572 3 A, 60 V, PNP, Si, POWER TRANSISTOR
2SB1573 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1526 2 A, 60 V, PNP, Si, POWER TRANSISTOR
2SD2407 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SB1572-T1-AZ 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,60V,3.0A,P-MINI MOLD3 制造商:Renesas 功能描述:Trans GP BJT PNP 60V 3A 4-Pin(3+Tab) SC-62 T/R
2SB1572-T1-AZ HY 制造商:Renesas Electronics 功能描述:PNP
2SB1572-T1-AZ-HZ 制造商:Renesas Electronics Corporation 功能描述:
2SB157400L 功能描述:TRANS PNP 50VCEO 2A U-G2 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
2SB1578-T1-AZ 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT PNP 60V 5A 4-Pin(3+Tab) MP-2 T/R Cut Tape