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参数资料
| 型号： | 2SB1578-GB2 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 文件页数： | 1/6页 |
| 文件大小： | 129K |
| 代理商： | 2SB1578-GB2 |
1998
Document No. D16147EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SB1578
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SB1578 features high current capacity in small dimension
and is ideal for DC/DC converters and mortor drivers.
FEATURES
New package with dimensions in between those of small signal
and power signal package
High current capacitance
Low collector saturation voltage
Complementary transistor with 2SD2425
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
6.0
V
Collector current (DC)
IC(DC)
5.0
A
Collector current (pulse)
IC(pulse)
PW
≤ 10 ms, duty cycle ≤ 50 %
7.0
A
Base current (DC)
IB(DC)
1.0
A
Total power dissipation
PT
7.5 cm
2
× 0.7 mm ceramic board used
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Electrode connection
1: Emitter
2: Collector
3: Base
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB1578-AZ | 5 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SB1578-GB3-AZ | 5 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SB1578-AZ | 5 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SB1578-GB2-AZ | 5 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SB1606P | 5 A, 80 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1578-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT PNP 60V 5A 4-Pin(3+Tab) MP-2 T/R Cut Tape |
| 2SB1578-T1-AZ-GB1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1578-T1-AZ-GB2 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1580 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1580T100 | 功能描述:达林顿晶体管 DARL PNP 100V 2A RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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