参数资料
型号: 2SB1605AP
厂商: PANASONIC CORP
元件分类: 功率晶体管
英文描述: 3 A, 80 V, PNP, Si, POWER TRANSISTOR
封装: TO-220E, FULL PACK-3
文件页数: 2/3页
文件大小: 164K
代理商: 2SB1605AP
2
Power Transistors
2SB1605, 2SB1605A
PC —Ta
IC —VCE
IC —VBE
VCE(sat) —IC
hFE —IC
fT —IC
Rth(t) —t
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) With a 50
× 50 × 2mm
Al heat sink
(4) Without heat sink
(P
C=2W)
(1)
(4)
(3)
(2)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
0
–12
–10
–8
–2
–6
–4
0
–6
–5
–4
–3
–2
–1
–80mA
–60mA
–40mA
–30mA
–20mA
–12mA
–8mA
–4mA
–16mA
I
B=–100mA
T
C=25C
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
0
–2.0
–1.6
– 0.4
–1.2
– 0.8
0
–10
–8
–6
–4
–2
T
C=100C
25C
V
CE=–4V
–25C
Base to emitter voltage V
BE
(V)
Collector
current
I
C
(A
)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C/IB=10
25C
–25C
T
C=100C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
1
3
10
30
100
300
1000
3000
10000
V
CE=–4V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
1
3
10
30
100
300
1000
3000
10000
V
CE=–5V
f=10MHz
T
C=25C
Collector current I
C
(A)
Transition
frequency
f
T
(MHz
)
10–4
10
10–3
10–1
10–2
1103
102
104
10–2
10–1
1
10
102
(1)
(2)
(1) Without heat sink
(2) With a 100
× 100 × 2mm Al heat sink
Time t (s)
Thermal
resistance
R
th
(t)
(C/W
)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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PDF描述
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