参数资料
型号: 2SB1617
元件分类: 功率晶体管
英文描述: 2 A, 100 V, PNP, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-8M1A, 3 PIN
文件页数: 1/5页
文件大小: 149K
代理商: 2SB1617
2SB1617
2006-11-21
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington)
2SB1617
Micro Motor Drive, Hammer Drive Applications
Power Switching Applications
Power Amplifier Applications
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Low saturation voltage: VCE (sat) = 1.5 V (max)
(IC = 1 A, IB = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
8
V
Collector current
IC (DC)
2
A
Collector current
IC (Pulse)
3
A
Base current
IB
0.5
A
Collector power dissipation
PC
1.3
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
BASE
EMITTER
≈ 4 k
≈ 800
COLLECTOR
相关PDF资料
PDF描述
2SB1623Q 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB1624-U 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SB1628-ZX 3 A, 16 V, PNP, Si, POWER TRANSISTOR
2SB1628-ZZ 3 A, 16 V, PNP, Si, POWER TRANSISTOR
2SB1629P 3 A, 60 V, PNP, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
2SB1617(TP,Q) 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape
2SB1623AP 功能描述:TRANS PNP 80VCEO 4A TO-220D RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
2SB1625 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR FM100-110V -6A 60W BCE
2SB1628-T1-AZ 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,16V,3.0A,P-MINI MOLD3 制造商:Renesas 功能描述:Trans GP BJT PNP 16V 3A 4-Pin(3+Tab) SC-62 T/R
2SB1628-T1-AZ-ZZ 制造商:Renesas Electronics Corporation 功能描述: