参数资料
型号: 2SB1623
厂商: PANASONIC CORP
元件分类: 功率晶体管
英文描述: Silicon PNP epitaxial planer type(For power amplification)
中文描述: 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封装: ROHS COMPLIANT, TO-220D-A1, 3 PIN
文件页数: 2/3页
文件大小: 233K
代理商: 2SB1623
2SB1623
2
SJD00086BED
VCE(sat) IC
hFE IC
Safe operation area
PC Ta
IC VCE
IC VBE
0
40
80
120
160
Collector
power
dissipation
P
C
(W)
Ambient temperature T
a (°C)
10
20
30
40
(1)
(2)
(3)
(4)
(1) TC
= T
a
(2) With a 100
× 100 × 2 mm
Al heat sink
(3) With a 50
× 50 × 2 mm
Al heat sink
(4) Without heat sink
(PC
= 2 W)
0
12
10
8
2
6
4
0
8
6
4
2
TC = 25
°C
IB
= 5.0 mA
1.5 mA
2.0 mA
1.0 mA
0.5 mA
4.5 mA
4.0 mA
3.5 mA
3.0 mA
2.5 mA
Collector-emitter voltage V
CE (V)
Collector
current
I
C
(A)
0
2.0
1.8
1.6
0.4
1.2
0.8
0
8
6
4
2
TC
= 25°C
VCE
= 3 V
Base-emitter voltage V
BE (V)
Collector
current
I
C
(A)
0.01
0.1
1
10
0.1
10
1
Collector current I
C (A)
Collector-emitter
saturation
voltage
V
CE(sat)
(V)
0.01
0.1
1
10
102
105
104
103
Collector current I
C (A)
Forward
current
transfer
ratio
h
FE
10
100
10
1
0.1
Non repetitive pulse
TC
= 25°C
ICP
IC
t
= 10 ms
t
= 1 ms
t
= 1 s
Collector-emitter voltage V
CE (V)
Collector
current
I
C
(A)
This product complies with the RoHS Directive (EU 2002/95/EC).
相关PDF资料
PDF描述
2SB1629 Silicon PNP epitaxial planar type(For power amplification)
2SB1631 Silicon PNP epitaxial planar type(For power amplification)
2SB1638 Silicon PNP epitaxial planar type(For low-voltage switching)
2SB1638A Silicon PNP epitaxial planar type(For low-voltage switching)
2SB1653 Silicon PNP triple diffusion planar type(For power switching)
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