参数资料
型号: 2SB1641
元件分类: 功率晶体管
英文描述: 5 A, 100 V, PNP, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-10T1A, 3 PIN
文件页数: 1/5页
文件大小: 219K
代理商: 2SB1641
2SB1641
2006-11-21
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1641
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
High DC current gain: hFE = 1500 (min) (VCE = 3 V, IC = 2.5 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2.5 A)
Complementary to 2SD2526
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
7
V
DC
IC
5
Collector current
Pulse
ICP
8
A
Base current
IB
0.5
A
Collector power dissipation
PC
1.8
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
BASE
EMITTER
≈ 5 k
≈ 150
COLLECTOR
相关PDF资料
PDF描述
2SB1641 5 A, 100 V, PNP, Si, POWER TRANSISTOR
2SB1644TLF 4 A, 80 V, PNP, Si, POWER TRANSISTOR
2SB1644TLE 4 A, 80 V, PNP, Si, POWER TRANSISTOR
2SB1651 50 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1651R 50 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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