参数资料
型号: 2SB1642
元件分类: 功率晶体管
英文描述: 4 A, 60 V, PNP, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-10R1A, SC-67, 3 PIN
文件页数: 1/5页
文件大小: 140K
代理商: 2SB1642
2SB1642
2006-11-21
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1642
Audio Frequency Power Amplifier Applications
Low collector saturation voltage: VCE (sat) = 1.5 V (max)
(IC = 2.5 A, IB = 0.25 A)
Collector power dissipation: PC = 25 W (Tc = 25°C)
Collector metal (fin) is fully covered with mold resin.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
4
A
Base current
IB
1
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
25
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
相关PDF资料
PDF描述
2SB1647Y 15 A, 150 V, PNP, Si, POWER TRANSISTOR
2SB1648P 17 A, 150 V, PNP, Si, POWER TRANSISTOR
2SB1672F 7 A, 80 V, PNP, Si, POWER TRANSISTOR
2SB1679GR 500 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1682 8 A, 160 V, PNP, Si, POWER TRANSISTOR
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