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参数资料
| 型号： | 2SB1685P |
| 厂商： | SANKEN ELECTRIC CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 6 A, 110 V, PNP, Si, POWER TRANSISTOR |
| 封装： | MT100, TO-3P, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 28K |
| 代理商： | 2SB1685P |
56
hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
0
–3
–2
–1
–0.1
–1
–0.5
–10
–5
–100
–50
–5A
I C=–3A
–0.01
–0.1
–0.05
–0.5
–6
–5
–1
100
5000
10000
500
1000
50000
25C
–30C
125C
(V CE=–4V)
–0.01
–0.1
–0.05
–0.5
–6
–5
–1
100
5000
10000
500
1000
50000
(V CE=–4V)
0
–6
–4
–2
0– 3
–2
–1
125C
(Case
Temp)
25C
(Case
Temp)
–30C
(Case
Temp)
(V CE=–4V)
I C– V CE Characteristics (Typical)
h FE– I C Characteristics (Typical)
h FE– I C Temperature Characteristics (Typical)
I C– V BE Temperature Characteristics (Typical)
V CE(sat) – I B Characteristics (Typical)
Pc – T a Derating
0
–2
–4
–6
–2
–6
–4
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
I B=–0.1mA
–5mA
–1mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
Base Current I B(mA)
Collector-Emitter
Saturation
Voltage
V
CE(sat)
(V)
Base-Emittor Voltage V BE(V)
Collector
Current
I
C
(A)
Collector Current I C(A)
DC
Current
Gain
h
FE
Collector Current I C(A)
DC
Current
Gain
h
FE
0.5
5
1
5
10
50
100
500 1000
2000
Time t(ms)
Transient
Thermal
Resistance
θ
j-a
(C/W)
0.02
0.1
0.05
0.5
1
5 6
60
40
0
20
100
120
80
Cut-off
Frequency
f
T
(MH
Z
)
(V CE=–12V)
Emitter Current I E(A)
Typ
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
–5
–10
–50
–100
–200
–0.1
–0.05
–1
–0.5
–10
–20
–5
10ms
DC
100ms
Without Heatsink
Natural Cooling
60
40
20
3.5
0
2 5
5 0
7 5
100
125
150
Ambient Temperature Ta(C)
Maximum
Power
Dissipation
P
C
(W)
With
Infinite
heatsink
Without Heatsink
Safe Operating Area (Single Pulse)
θj-a–t Characteristics
f T– I E Characteristics (Typical)
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2641)
Application : Audio, Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
–110
–5
–6
–1
60(Tc=25°C)
150
–55 to +150
Unit
V
A
W
°C
sAbsolute maximum ratings
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Ratings
–100max
–110min
5000min
–2.5max
–3.0max
100typ
110typ
Unit
A
V
MHz
pF
Conditions
VCB=–110V
VEB=–5V
IC=–30mA
VCE=–4V, IC=–5A
IC=–5A, IB=–5mA
VCE=–12V, IE=0.5A
VCB=–10V, f=1MHz
Darlington
2SB1685
(Ta=25°C)
sTypical Switching Characteristics (Common Emitter)
VCC
(V)
–30
RL
(
)
6
IC
(A)
–5
VBB2
(V)
5
IB2
(mA)
5
ton
(
s)
1.1typ
tstg
(
s)
3.2typ
tf
(
s)
1.1typ
IB1
(mA)
–5
VBB1
(V)
–10
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0g
a. Part No.
b. Lot No.
B
E
C
(70
)
Equivalent circuit
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