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参数资料
| 型号： | 2SB1739 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TP, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 49K |
| 代理商： | 2SB1739 |
2SB1739 / 2SD2720
No. A0437-1/5
Features
Low saturation voltage.
Contains diode between collector and emitter.
Contains bias resistance between base and emitter.
Large current capacity.
Specifications ( ) : 2SB1739
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)40
V
Collector-to-Emitter Voltage
VCEO
(--)30
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)3
A
Collector Current (Pulse)
ICP
(--)5
A
Collector Dissipation
PC
1W
Tc=25
°C15
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)30V, IE=0A
(--)1.0
A
DC Current Gain
hFE1VCE=(--)2V, IC=(--)0.5A
70
hFE2VCE=(--)2V, IC=(--)2A
50
Gain-Bandwidth Product
fT
VCE=(--)2V, IC=(--)0.5A
100
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(55)40
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)2A, IB=(--)100mA
(--0.28)0.23
(--0.6)0.5
V
Base-to-Emitterr Saturation Voltage
VBE(sat)
IC=(--)2A, IB=(--)100mA
(--)1.5
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10A, IE=0A
(--)40
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO1IC=(--)10A, RBE=∞
(--)40
V
V(BR)CEO2IC=(--)10mA, RBE=∞
(--)30
V
Diode Forwad Voltage
VF
IF=(--)0.5A
(--)1.5
V
Base-to-Emitter Resistance
RBE
0.8
k
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0437A
83006 MS IM / 72006EA MS IM TC-00000064
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SB1739 / 2SD2720
PNP / NPN Epitaxial Planar Silicon Transistors
Compact Motor Driver
Applications
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| 2SB546A-AZ | 2 A, 150 V, PNP, Si, POWER TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB176 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB187 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-1 -25V -.15A .2W |
| 2SB206 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:GE PNP POWER BJT |
| 2SB2107 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power Bipolar Transistors |
| 2SB219A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-5 -30V -.5A .225W |
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