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参数资料
| 型号： | 2SB621AS |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, SC-43A, TO-92-B1, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 159K |
| 代理商： | 2SB621AS |
Transistors
1
Publication date: February 2003
SJC00044CED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SB0621
VCBO
IC
= 10 A, I
E
= 0
30
V
(Emitter open)
2SB0621A
60
Collector-emitter voltage
2SB0621
VCEO
IC = 2 mA, IB = 0
25
V
(Base open)
2SB0621A
50
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
5V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
A
Forward current transfer ratio
hFE1 *
VCE
= 10 V, I
C
= 500 mA
85
340
hFE2
VCE = 5 V, IC = 1 A
50
Collector-emitter saturation voltage
VCE(sat)
IC = 500 mA, IB = 50 mA
0.2
0.4
V
Base-emitter saturation voltage
VBE(sat)
IC
= 500 mA, I
B
= 50 mA
0.85
1.2
V
Transition frequency
fT
VCB = 10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
20
30
pF
(Common base, input open circuited)
2SB0621 (2SB621), 2SB0621A (2SB621A)
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A)
■ Features
Low collector-emitter saturation voltage V
CE(sat)
High transition frequency f
T
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB0621
VCBO
30
V
(Emitter open)
2SB0621A
60
Collector-emitter voltage 2SB0621
VCEO
25
V
(Base open)
2SB0621A
50
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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相关代理商/技术参数 |
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|---|---|
| 2SB621Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-92 |
| 2SB621R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-92 |
| 2SB621S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-92 |
| 2SB624 | 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANSISTOR SC-59-30V .7A .2W SURFACE MOUNT |
| 2SB624_0712 | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
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