参数资料
型号: 2SB632E
元件分类: 小信号晶体管
英文描述: 2000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126
封装: TO-126, 3 PIN
文件页数: 1/9页
文件大小: 84K
代理商: 2SB632E
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistor
25V/35V, 2A Low-Frequency
Power Amplifier Applications
Ordering number:ENN341G
2SB632, 632K/2SD612, 612K
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13004TN (KT)/91098HA (KT)/90595MO (KOTO)/4017KI/D174MW, TS/E108, 8-2176 No.341–1/9
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( ) : 2SB632, 632K
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2009B
[2SB632, 632K/2SD612, 612K]
Features
High collector dissipation and wide ASO.
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
Tc=25C
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3.0
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