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参数资料
| 型号： | 2SB632E |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 封装： | TO-126, 3 PIN |
| 文件页数： | 6/9页 |
| 文件大小： | 84K |
| 代理商： | 2SB632E |
2SB632, 632K/2SD612, 612K
No.341–6/9
--5
--4
--3
--2
--1
0
1
2
3
10
100
25
3
1k
25
3
10k
25
3
100k
25
3
f response
ITR08308
VCC=28.8V
Transformer power supply
Quiescent
RL=8
Rg=600
0dB=40dB / 1kHz
PO=1W / 1kHz
10
100
5
7
5
7
3
2
100
10
5
23
1k
5
23
10k
5
23
100k
5
23
ri -- f
ITR08310
VCC=28.8V
Transformer power supply
Quiescent
RL=8
PO=1W
0.1
1.0
5
3
2
10
5
3
2
100
5
3
2
100
10
5
23
1k
5
23
10k
5
23
100k
5
23
ro -- f
ITR08311
With NFB
--12
--10
--8
--6
--4
--2
0
2
4
10
100
25
3
1k
25
3
10k
25
3
100k
25
3
f response
ITR08309
VCC=28.8V
Transformer power supply
Quiescent
RL=8
Rg=600
0dB=75dB / 1kHz
PO=1W / 1kHz
Without NFB
VCC=28.8V
Transformer power supply
Quiescent
RL=8
PO=1W
1.0
5
7
10
5
3
2
1.0
0.1
57
23
10
57
23
PC -- PO
ITR08313
0.01
0.1
5
7
3
2
5
3
2
25
30
35
40
45
50
55
60
THD -- VG
ITR08312
VCC=28.8V
Transformer power supply
Quiescent
RL=8
f=1kHz
PO=1W
R15 in circuit diagram
470
820
1.5k
2.7k
4.7k
8.2k
Voltage gain
30dB
35dB
40dB
45dB
50dB
55dB
Distortion
range
when
D to
F rank
versions
are
used
at each
stage.
RL=8
f=1kHz
Transformer power supply
(Per transistor at output stage)
V CC
=33.1V(15%up)
at
quiescent
mode
V CC
=28.8V
at quiescent
mode
5
10
25
20
15
30
20
30
60
50
40
70
26
27
24
25
30
31
28
29
33
32
34
ID, ICCO -- VCC
ITR08314
For Test Circuit, see below.
I CCO
I D
0
10
40
30
20
70
60
50
0
4
16
12
8
28
24
20
010
--20
--10
40
20
30
60
50
70
VN, ICCO, ID -- Ta
ITR08315
I CCO
ID
VN
ID
Heat sink
115
×80×2mm3 Al fin
Stereo mode
VCC=33.1V
Up 15%
Solid line
: 28.8V
Dot-dsh line : 33.1V(Up 15%)
For Test Circuit, see below.
Response
–
dB
Frequency, f – Hz
Input
Resistance,
r
i
–
k
Frequency, f – Hz
Voltage Gain, VG – dB
Output
Resistance,
r
o
–
Frequency, f – Hz
Response
–
dB
Frequency, f – Hz
T
otal
Harmonic
Distortion,
THD
–
%
Supply Voltage, VCC – V
Quiescent
Current,
I
CCO
–
mA
Dri
v
er
Current,
I
D
–
mA
Ambient Temperature, Ta –
°C
I D
,I
CCO
–
mA
Center
V
oltage,
V
N
–
V
Output Power, PO – W
Collector
Dissipatrion,
P
C
–
W
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PDF描述 |
|---|---|
| 2SD612K | 2000 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SB632KD | 2000 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SB632 | 2000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SB632K | 2000 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SB632KE | 2000 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB632F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | TO-126 |
| 2SB632K | 制造商:JMNIC 制造商全称:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon PNP Power Transistors |
| 2SB632KD | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 2A I(C) | TO-126 |
| 2SB632KF | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 2A I(C) | TO-126 |
| 2SB633 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
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