参数资料
型号: 2SB647ABTZ-E
元件分类: 小信号晶体管
英文描述: 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: SC-51, TO-92 MOD, 3 PIN
文件页数: 4/8页
文件大小: 184K
代理商: 2SB647ABTZ-E
2SB647, 2SB647A
Rev.2.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
2SB647
2SB647A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–120
–120
V
IC = –10
A, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–80
–100
V
IC = –1 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
–5
–5
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
–10
–10
A
VCB = –100 V, IE = 0
DC current transfer ratio
hFE1*
1
60
320
60
200
VCE = –5 V,
IC = –150 mA*
2
hFE2
30
30
VCE = –5 V,
IC = –500 mA*
2
Collector to emitter
saturation voltage
VCE(sat)
–1
–1
V
IC = –500 mA,
IB = –50 mA*
2
Base to emitter voltage
VBE
–1.5
–1.5
V
VCE = –5 V,
IC = –150 mA*
2
Gain bandwidth product
fT
140
140
MHz
VCE = –5 V,
IC = –150 mA
Collector output
capacitance
Cob
20
20
pF
VCB = –10 V, IE = 0
f = 1 MHz
Notes: 1. The 2SB647 and 2SB647A are grouped by hFE1 as follows.
2. Pulse test
B
C
D
2SB647
100 to 200
160 to 320
2SB647A
60 to 120
100 to 200
相关PDF资料
PDF描述
2SB647ACTZ-E 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SB649 1500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB649 1500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB649D 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB649AC 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SB647AC 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-92VAR
2SB647ACTZ-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SB647B 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR
2SB647C 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR
2SB647-C 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT PNP 80V 1A 3-Pin TO-92 Mod