参数资料
型号: 2SB647B
元件分类: 小信号晶体管
英文描述: 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: TO-92MOD, 3 PIN
文件页数: 5/8页
文件大小: 47K
代理商: 2SB647B
2SB647, 2SB647A
3
Maximum Collector Dissipation
Curve
1.2
0.8
0.4
0
50
150
100
Ambient Tmperature Ta (
°C)
Collector
power
dissipation
P
C
(W)
Typical Output Characteristics
–1.0
–0.8
–0.6
–0.4
–0.2
0
–2
–10
–6
–4
–8
IB = 0
–0.5mA
–2
–1
–5
–10
–20
–30
–40
–60
–80
–100
–120
Collector
current
I
C
(A)
Collector to Emitter Voltage VCE (V)
P
C
= 0.9
W
Typical Transfer Characteristics
–500
–200
–100
–50
–20
–10
–5
–2
–1
0
–0.2
–0.4
–0.6
–0.8
–1.0
VCE = –5 V
Pulse
Ta
=
75
°C
25
–25
Base to Emitter Voltage VBE (V)
Collector
current
I
C
(mA)
DC Current Transfer Ratio
vs. Collector Current
VCE = –5 V
Pulse
Ta = 75°C
600
500
400
300
200
100
0
–1
–3
–30
–300
–10
Collector Current IC (mA)
DC
current
transfer
ratio
h
FE
–100
–1,000
25
–25
相关PDF资料
PDF描述
2SB648 50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB648AC 50 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB648AB 50 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB648B 50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB648C 50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SB647C 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR
2SB647-C 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT PNP 80V 1A 3-Pin TO-92 Mod
2SB647CTZ-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SB647D 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR
2SB647DTZ-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial