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参数资料
| 型号： | 2SB647D |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 封装： | TO-92MOD, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 31K |
| 代理商： | 2SB647D |
2SB647, 2SB647A
3
Maximum Collector Dissipation
Curve
1.2
0.8
0.4
0
50
150
100
Ambient Tmperature Ta (
°C)
Collector
power
dissipation
P
C
(W)
Typical Output Characteristics
–1.0
–0.8
–0.6
–0.4
–0.2
0
–2
–10
–6
–4
–8
IB = 0
–0.5mA
–2
–1
–5
–10
–20
–30
–40
–60
–80
–100
–120
Collector
current
I
C
(A)
Collector to Emitter Voltage VCE (V)
P
C
= 0.9
W
Typical Transfer Characteristics
–500
–200
–100
–50
–20
–10
–5
–2
–1
0
–0.2
–0.4
–0.6
–0.8
–1.0
VCE = –5 V
Pulse
Ta
=
75
°C
25
–25
Base to Emitter Voltage VBE (V)
Collector
current
I
C
(mA)
DC Current Transfer Ratio
vs. Collector Current
VCE = –5 V
Pulse
Ta = 75°C
600
500
400
300
200
100
0
–1
–3
–30
–300
–10
Collector Current IC (mA)
DC
current
transfer
ratio
h
FE
–100
–1,000
25
–25
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB647DTZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB648 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
| 2SB648A | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SB648AB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 50MA I(C) | TO-126VAR |
| 2SB648AC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 50MA I(C) | TO-126VAR |
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