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参数资料
| 型号： | 2SB648AB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TO-126MOD, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 35K |
| 代理商： | 2SB648AB |
2SB648, 2SB648A
2
Electrical Characteristics (Ta = 25
°C)
2SB648
2SB648A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–180 —
—
–180 —
—
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–120 —
—
–160 —
—
V
I
C = –1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
——
–5
——V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–10
—
–10
AV
CB = –160 V, IE = 0
DC current transfer
ratio
h
FE1*
1
60
—
320
60
—
200
V
CE = –5 V,
I
C = –10 mA
h
FE2
30
—
30
—
V
CE = –5 V, IC = –1 mA
Collector to emitter
saturation voltage
V
CE(sat)
——–2
V
I
C = –30 mA,
I
B = –3 mA
Base to emitter voltage V
BE
——–1.5
V
CE = –5 V,
I
C = –10 mA
Gain bandwidth product f
T
—
140
—
140
—
MHz
V
CE = –10 V,
I
C = –10 mA
Collector output
capacitance
Cob
—
4.5
—
4.5
—
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SB648 and 2SB648A are grouped by h
FE1 as follows.
BCD
2SB648
60 to 120
100 to 200
160 to 320
2SB648A
60 to 120
100 to 200
—
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB648AC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 50MA I(C) | TO-126VAR |
| 2SB648AD | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SB648B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-126VAR |
| 2SB648C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-126VAR |
| 2SB648D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-126VAR |
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