参数资料
型号: 2SB648B
元件分类: 小信号晶体管
英文描述: 50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: TO-126MOD, 3 PIN
文件页数: 2/6页
文件大小: 35K
代理商: 2SB648B
2SB648, 2SB648A
2
Electrical Characteristics (Ta = 25
°C)
2SB648
2SB648A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–180 —
–180 —
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–120 —
–160 —
V
I
C = –1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
——
–5
——V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
–10
–10
AV
CB = –160 V, IE = 0
DC current transfer
ratio
h
FE1*
1
60
320
60
200
V
CE = –5 V,
I
C = –10 mA
h
FE2
30
30
V
CE = –5 V, IC = –1 mA
Collector to emitter
saturation voltage
V
CE(sat)
——–2
V
I
C = –30 mA,
I
B = –3 mA
Base to emitter voltage V
BE
——–1.5
V
CE = –5 V,
I
C = –10 mA
Gain bandwidth product f
T
140
140
MHz
V
CE = –10 V,
I
C = –10 mA
Collector output
capacitance
Cob
4.5
4.5
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SB648 and 2SB648A are grouped by h
FE1 as follows.
BCD
2SB648
60 to 120
100 to 200
160 to 320
2SB648A
60 to 120
100 to 200
相关PDF资料
PDF描述
2SB648C 50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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相关代理商/技术参数
参数描述
2SB648C 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-126VAR
2SB648D 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-126VAR
2SB649 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:PNP Epitaxial Planar Transistors
2SB649_09 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SB649_11 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR