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参数资料
| 型号： | 2SB649D |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TO-126MOD, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 32K |
| 代理商： | 2SB649D |
2SB649, 2SB649A
4
Maximum Collector Dissipation
Curve
30
20
10
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
P
C
(W)
Area of Safe Operation
ICmax
(–13.3 V, –1.5 A)
(–40 V, –0.5 A)
DC Operation (TC = 25°C)
(–120 V, –0.038 A)
(–160 V, –0.02 A)
2SB649A
2SB649
–3
–1.0
–0.3
–0.1
–0.03
–0.01
–1
–3
–10
Collector to emitter voltage VCE (V)
–30
–100
–300
Collector
current
I
C
(A)
TC = 25°C
P
C =
20
W
Typical Output Characteristics
–1.0
–0.8
–0.6
–0.4
–0.2
0
–10
–40
–20
IB = 0
–0.5 mA
–1.0
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
–4.5
–5.0
–5.5
–30
–50
Collector to emitter voltage VCE (V)
Collector
current
I
C
(A)
Typical Transfer Characteristics
–500
–100
Collector
current
I
C
(mA)
–10
–1
0
–0.4
Base to emitter voltage VBE (V)
–0.8
–0.2
–0.6
–1.0
VCE = –5 V
Ta
=
75
°C
25
–25
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB649AC | 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB649C | 1500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB649AC | 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB688R | 8 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 2SB688O | 8 A, 120 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB649-D-AB3-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649-D-AB3-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649-D-AB3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649-D-T60-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649-D-T60-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
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