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参数资料
| 型号： | 2SB688O |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 77K |
| 代理商： | 2SB688O |
UTC 2SB688
PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
www.unisonic.com
QW-R214-007,A
TYPICAL CHARACTERISTICS
0
240
20
0
COLLECTOR
POWER
DISSIPATION,
P
C
(W)
AMBIENT TEMPERATURE, Ta (℃)
PC - Ta
80
100
200
40
60
120
160
40
80
(1)
(2)
(3)
(4)
(5)
(1)Ta=Tc
INFINITEHEATSINK
(2)300×300×2mm A1
HEAT SINK
(3)200×200×2mm A1
HEAT SINK
(4)100×100×2mm A1
HEAT SINK
(5)NO HEAT SINK
--12
-10
-14
-4
COLLECTOR
CURRENT,
I
C
(A)
COLLECTOR EMITTER VOLTAGE, VCE (V)
-6
IC - VCE
0
-2
-8
-10
0-2
-4
-6
-8
COMMON EMITTER
TC=25℃
-200mA
-50mA
-4
00
mA
0mA
-30
0m
A
IB= -20mA
-100mA
CO
LLE
CT
O
R
-E
M
IT
T
E
R
S
A
TU
RA
T
IO
N
VO
L
T
AG
E
,V
CE
(s
at)
(V
)
-0.1
-10
-100
-1
CO
LL
E
C
T
O
R
CU
RRE
NT
,I
C
(A
)
COLLECTOR EMITTER VOLTAGE, VCE (V)
-300
SAFE OPERATING AREA
-1
-30
-3
-30
-0.3
-0.5
-5
-10
IC MAX. (PULSED)※
IC MAX
(CONTINUOUS)
※SINGLE NONREPETITIVE
PULSE TC=25℃
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
V
CE
O
MA
X
t=1ms※
t=10ms※
t=100ms※
t=500ms※
DC
O
PE
RA
TIO
N
T
C=2
5℃
-10
COLLECTOR CURRENT, IC (A)
VCE(sat) - IC
-0.5
-1
-0.3
-0.01
-0.03
-0.1
-0.3
-0.05
-0.1
-0.03
-0.01
-3
-1
-3
-5
TC=25℃
TC=-25 ℃
TC
=1
00
℃
COMMON EMITTER
IC/IB=10
-0.01
30
10
DC
CU
RRE
NT
G
A
IN
,h
FE
COLLECTOR CURRENT, IC (A)
hFE - IC
300
1K
50
100
-0.03
-0.1
-0.3
-1
500
-3
-10
TC=100℃
TC=25℃
TC= -25℃
COMMON EMITTER
VCE=-5V
UTC assum es no responsibility for equipm ent failures that result from using products at v alues that
exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB688R | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 8A I(C) | TO-247VAR |
| 2SB689 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:LOW FREQUENCY POWER AMPLIFIER TV VERTICAL DEFLECTION OUTPUT |
| 2SB690 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD726 |
| 2SB691 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistor |
| 2SB694 | 制造商:n/a 功能描述:2SB694 TO3 S3B2F |
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