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参数资料
| 型号： | 2SB709A |
| 厂商： | RECTRON LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 337K |
| 代理商： | 2SB709A |
RECTRON
SEMICONDUCTOR
FEATURES
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
2SB709A
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
OC ambient temperature unless otherwise specified.
For capacitive load ,derate current by 20%.
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
2006-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
Emitter cut-off current (VCE= -10V, IB=0)
DC current gain (VCE= -10V, IC= -2mA)
Collector cut-off current (VCB= -20V, IE=0)
Transition frequency (VCE= -10V, IC= -1mA, f= 200MHZ)
Collector output capacitance (VCB= -10V, IE= 0, f= 1MHz)
CHARACTERISTICS
SYMBOL
VALUE
UNITS
-
m
A
m
A
V
mA
V
MHz
P
F
Collector-base breakdown voltage (IC= -10mA, IE=0)
Collector-emitter saturation voltage (IC= -100mA, IB= -10mA)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
Junction and Storage temperature
Collector-emitter breakdown voltage (IC= -2mA, IB=0)
Emitter-base breakdown voltage (IE= -10mA, IC=0)
CLASSIFICATION OF hFE
RANK
Range
Marking
Q
160-260
BQ1
V(BR)CBO
VCEO
VCBO
VEBO
V(BR)CEO
V(BR)EBO
ICEO
hFE
ICBO
VCE(sat)
fT
Cob
R
MAX
-
-45
-0.1
460
-0.5
2.7
-100
-45
-7
-
160
MIN
S
210-340
BR1
290-460
BS1
0.055(1.40)
0.047(1.20)
-
60
BASE
EMITTER
COLLECTOR
*
1
2
3
2
3
Power dissipation
PCM :
0.2
W(Tamb=25OC)
IC
TJ,Tstg
-45
-7
-45
-200
-55-150
OC
Single phase, half wave, 60 Hz, resistive or inductive load.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB709A_0712 | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
| 2SB709A_11 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Silicon General Purpose Transistor |
| 2SB709AI | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB709AQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 100MA I(C) | TO-236AB |
| 2SB709A-Q | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
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