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参数资料
| 型号： | 2SB709AS |
| 英文描述： | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 100MA I(C) | TO-236AB |
| 中文描述： | 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 100mA的一（c）|至236AB |
| 文件页数： | 2/4页 |
| 文件大小： | 73K |
| 代理商： | 2SB709AS |
2
Transistor
2SB0709A
0
160
40
120
80
140
20
100
60
0
240
200
160
120
80
40
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(mW
)
0
–12
–10
–8
–2
–6
–4
0
–120
–100
–80
–60
–40
–20
Ta=25C
–250
A
–200
A
–150
A
–100
A
–50
A
I
B=–300A
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(mA
)
0
–450
–150
–300
0
–60
–50
–40
–30
–20
–10
V
CE=–5V
Ta=25C
Base current I
B
(
A)
Collector
current
I
C
(mA
)
0
–1.8
– 0.6
–1.2
0
–400
–300
–100
–250
–350
–200
–50
–150
V
CE=–5V
Ta=25C
Base to emitter voltage V
BE
(V)
Base
current
I
B
(
A
)
0
–2.0
–1.6
– 0.4
–1.2
– 0.8
0
–240
–200
–160
–120
–80
–40
V
CE=–5V
Ta=75C
–25C
25C
Base to emitter voltage V
BE
(V)
Collector
current
I
C
(mA
)
–1
–10
–100
–1000
–3
–30
–300
– 0.001
– 0.003
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
I
C/IB=10
Ta=75C
25C
–25C
Collector current I
C
(mA)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
–1
–10
–100
–1000
–3
–30
–300
0
600
500
400
300
200
100
V
CE=–10V
Ta=75C
25C
–25C
Collector current I
C
(mA)
Forward
current
transfer
ratio
h
FE
0.1
1
10
100
0.3
3
30
0
160
120
40
100
140
80
20
60
V
CB=–10V
Ta=25C
Emitter current I
E
(mA)
Transition
frequency
f
T
(MHz
)
–1
–3
–10
–30
–100
0
8
6
2
5
7
4
1
3
I
E=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
PC — Ta
IC — VCE
IC — IB
IB — VBE
IC — VBE
VCE(sat) — IC
hFE — IC
fT — IE
Cob — VCB
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB709A-S | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SB709-Q | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SB709-RS | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB709S | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB710 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
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