参数资料
型号: 2SB745AT
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 50 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: M-A1, 3 PIN
文件页数: 1/4页
文件大小: 80K
代理商: 2SB745AT
Transistors
2SB0745, 2SB0745A (2SB745, 2SB745A)
Silicon PNP epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SD0661 (2SD661) and 2SD0661A (2SD661A)
s Features
q
Low noise voltage NV.
q
High foward current transfer ratio hFE.
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–35
–55
–35
–55
–5
–200
–50
400
150
–55 ~ +150
Unit
V
mA
mW
C
2SB0745
2SB0745A
2SB0745
2SB0745A
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
*
VCE(sat)
VBE
fT
NV
Conditions
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10A, IE = 0
IC = –2mA, IB = 0
IE = –10A, IC = 0
VCB = –5V, IE = 2mA
IC = –100mA, IB = –10mA
VCE = –1V, IC = –100mA
VCB = –5V, IE = 2mA, f = 200MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100k, Function = FLAT
min
–35
–55
–35
–55
–5
180
typ
– 0.7
150
max
–100
–1
700
– 0.6
–1
150
Unit
nA
A
V
MHz
mV
Unit: mm
1:Base
2:Collector
3:Emitter
M-A1 Package
6.9±0.1
2.5±0.1
(1.0)
(1.5)
(0.85)
0.45±0.05
0.55±0.1
(2.5)
21
3
R 0.7
R 0.9
(0.4)
3.5
±0.1
4.5
±0.1
4.1
±0.2
2.4
±0.2
1.25
±0.05
2.0
±0.2
1.0
±0.1
(1.5)
2SB0745
2SB0745A
2SB0745
2SB0745A
*h
FE Rank classification
Rank
R
S
T
hFE
180 ~ 360
260 ~ 520
360 ~ 700
Note.) The Part numbers in the Parenthesis show
conventional part number.
1
SJC00050AED
Publication date: August 2002
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