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参数资料
| 型号： | 2SB772-E-T9N-B |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-92NL, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 197K |
| 代理商： | 2SB772-E-T9N-B |
2SB772
PNP SILICON TRANSISTOR
■
TYPICAL CHARACTERICS
Static Characteristics
-Collector-Emitter voltage (V)
-C
oll
e
ctor
Curre
nt,
Ic
(A)
04
8
12
16
20
0
0.4
0.8
1.2
1.6
Case Temperature, Tc (℃)
-IB=1mA
-IB=2mA
-IB=3mA
-IB=4mA
-IB=5mA
-IB=6mA
-IB=7mA
-IB=8mA
-IB=9mA
Derating Curve of Safe Operating Areas
-
Ic
D
erating
(%
)
200
150
100
50
0
-50
0
50
100
150
S/b
lim
ited
Dis
sip
atio
n
lim
ite
d
Case Temperature, Tc (℃)
200
150
100
50
0
-50
Power Derating
Po
wer
Di
ssi
pa
tion
(W)
0
4
8
12
Collector Output Capacitance
-Collector-Base Voltage(v)
Output
C
apaci
tance(pF)
10
0
10
-1
10
-2
10
-3
10
1
10
2
10
3
10
0
IE=0
f=1MHz
Current Gain-
Bandwidth Product
Cu
rrent
Gai
n
-
Band
wid
th
Pro
duct,
fT
(MHz)
10
1
10
2
10
3
10
0
VCE=5V
Collector-Emitter Voltage
-Col
lector
Cu
rrent,
Ic
(A)
Safe Operating Area
Ic(max),DC
Ic(max),Pulse
10m
S
1mS
0.
1m
S
Collector Current, Ic (A)
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
10
0
10
1
10
2
IB=8mA
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R213-016,E
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB772G | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | TO-126 |
| 2SB772-GR | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor |
| 2SB772G-X-T60-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SB772G-X-T6C-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SB772G-X-T9N-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
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