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参数资料
| 型号： | 2SB772-O-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 292K |
| 代理商： | 2SB772-O-BP |
2SB772
-R
PNP Silicon
Plastic-Encapsulate
Transistor
Features
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V (BR)CEO
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
30
---
Vdc
V (BR)CBO
Collector-Base Breakdown Voltage
(I C=100uAdc, IE=0)
40
---
Vdc
V (BR)EBO
Emitter-Base Breakdown Voltage
(I E=100uAdc, IC=0)
5.0
---
Vdc
I CBO
Collector Cutoff Current
(V CB=40Vdc, IE=0)
---
1.0
uAdc
ICEO
Collector Cutoff Current
(V CE=30Vdc, IB=0)
---
1.0
uAdc
IEBO
Emitter Cutoff Current
(V EB=6.0Vdc, IC=0)
---
1.0
uAdc
ON CHARACTERISTICS
h FE(1)
DC Current Gain
(IC=1.0Adc, VCE=2.0Vdc)
60
400
---
h FE(2)
DC Current Gain
(IC=100mAdc, VCE=2.0Vdc)
32
---
V CE(sat)
Collector-Emitter Saturation Voltage
(I C=2.0Adc, IB=0.2Adc)
---
0.5
Vdc
V BE(sat)
Base-Emitter Saturation Voltage
(I C=2.0Adc, IB=0.2Adc)
---
2.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
f T
Transistor Frequency
(I C=0.1Adc, VCE=5.0Vdc, f=10MHz)
50
---
MHz
CLASSIFICATION OF HFE (1)
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
omponents
20736 Marilla
Street Chatsworth
!"#
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MCC
Revision: A
2011/01/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
0.291
0.307
7.40
7.80
0.417
0.433
10.60
11.00
0.602
0.618
15.30
15.70
4
1
3.90
4.10
0.118
0.126
3.00
3.20
0.026
0.034
0.66
0.86
0.046
0.054
1.17
1.37
0.090TYP
2.290TYP
0.098
0.114
2.50
2.90
D
B
N
A
C
E
F
G
Q
K
M
N
0.043
0.059
1.10
1.50
Q
0.018
0.024
0.45
0.60
L
J
PIN 1.
EMITTER
PIN 2.
COLLECTOR
PIN 3.
BASE
1
2
3
L
0.083
0.091
2.10
2.30
M
0.000
0.012
0.00
0.30
DIMENSIONS
2SB772
-O
2SB772
-Y
2SB772
-GR
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Capable of 1.25Watts of Power Dissipation.
Collector-current 3.0A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
OC to +150OC
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB772-GR-BP | 3 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SB772-Y-BP | 3 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SB772-R-BP | 3 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SB772Q | Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SB772Q-BP | 30 V, PNP, Si, POWER TRANSISTOR, TO-126 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB772P | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB772-P | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB772PT | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SB772Q | 制造商:Renesas Electronics 功能描述:PNP Bulk 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB772-Q-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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