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参数资料
| 型号： | 2SB772-R |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/3页 |
| 文件大小： | 272K |
| 代理商： | 2SB772-R |
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PNP SILICON POWER TRANSISTOR
2SB772
PNP SILICON POWER TRANSISTOR
DATA SHEET
Document No. D17118EJ2V0DS00 (2nd edition)
(Previous No. TC-3569)
Date Published March 2004 N CP(K)
Printed in Japan
c
The mark
shows major revised points.
2004
DESCRIPTION
The 2SB772 is PNP silicon transistor suited for the output stage of 3
W audio amplifier, voltage regulator, DC-DC converter and relay
driver.
FEATURES
Low saturation voltage
VCE(sat)
≤ 0.5 V (IC = 2 A, IB = 0.2 A)
Excellent hFE linearity and high hFE
hFE = 60 to 400 (VCE =
2 V, IC = 1 A)
Less cramping space required due to small and thin package and
reducing the trouble for attachment to a radiator.
No insulator bushing required.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature
55 to +150°C
Junction Temperature
150
°C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA = 25
°C)
1.0 W
Total Power Dissipation (TC = 25
°C)
10 W
Maximum Voltages and Currents (TA = 25
°C)
VCBO
Collector to Base Voltage
40 V
VCEO
Collector to Emitter Voltage
30 V
VEBO
Emitter to Base Voltage
5.0 V
IC(DC)
Collector Current (DC)
3.0 A
IC(pulse)
Note
Collector Current (pulse)
7.0 A
Note Pulse Test PW
≤ 350
s, Duty Cycle ≤ 2%
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC Current Gain
hFE1
VCE =
2.0 V, IC = 20 mA
Note
30
220
DC Current Gain
hFE2
VCE =
2.0 V, IC = 1.0 mA
Note
60
160
400
Gain Bandwidth Product
fT
VCE =
5.0 V, IC = 0.1 A
80
MHz
Output Capacitance
Cob
VCB =
10 V, IE = 0, f = 1.0 MHz
55
pF
Collector Cutoff Current
ICBO
VCB =
30 V, IE = 0 A
1.0
A
Emitter Cutoff Current
IEBO
VEB =
3.0 V, IC = 0 A
1.0
A
Collector Saturation Voltage
VCE(sat)
IC =
2.0 A, IB = 0.2 A
Note
0.3
0.5
V
Base Saturation Voltage
VBE(sat)
IC =
2.0 A, IB = 0.2 A
Note
1.0
2.0
V
Note Pulse Test: PW
≤ 350
s, Duty Cycle ≤ 2%
CLASSIFICATION OF hFE
Rank
R
Q
P
E
Range
60 to 120
100 to 200
160 to 320
200 to 400
Remark Test Conditions: VCE =
2.0 V, IC = 1.0 A
PACKAGE DRAWING (Unit: mm)
8.5 MAX.
3.2 ±0.2
12 TYP.
2.3 TYP.
1.2 TYP.
0.55
2.5
±0.2
12.0
MAX.
13.0
MIN.
2.8 MAX.
3.8
±0.2
0.8
+0.08
–0.05
+0.08
–0.05
1: Emitter
2: Collector: connected to mounting plane
3: Base
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB772S | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SB772S_12 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SB772S-AB3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP EPITAXIAL SILICON TRANSISTOR |
| 2SB772SG | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 2A I(C) | TO-92 |
| 2SB772SG-X-AA3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
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