参数资料
型号: 2SB772G-Q-TN3-R
厂商: UNISONIC TECHNOLOGIES CO LTD
元件分类: 小信号晶体管
英文描述: 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252
封装: HALOGEN FREE PACKAGE-3
文件页数: 3/4页
文件大小: 197K
代理商: 2SB772G-Q-TN3-R
2SB772
PNP SILICON TRANSISTOR
TYPICAL CHARACTERICS
Static Characteristics
-Collector-Emitter voltage (V)
-C
oll
e
ctor
Curre
nt,
Ic
(A)
04
8
12
16
20
0
0.4
0.8
1.2
1.6
Case Temperature, Tc ()
-IB=1mA
-IB=2mA
-IB=3mA
-IB=4mA
-IB=5mA
-IB=6mA
-IB=7mA
-IB=8mA
-IB=9mA
Derating Curve of Safe Operating Areas
-
Ic
D
erating
(%
)
200
150
100
50
0
-50
0
50
100
150
S/b
lim
ited
Dis
sip
atio
n
lim
ite
d
Case Temperature, Tc ()
200
150
100
50
0
-50
Power Derating
Po
wer
Di
ssi
pa
tion
(W)
0
4
8
12
Collector Output Capacitance
-Collector-Base Voltage(v)
Output
C
apaci
tance(pF)
10
0
10
-1
10
-2
10
-3
10
1
10
2
10
3
10
0
IE=0
f=1MHz
Current Gain-
Bandwidth Product
Cu
rrent
Gai
n
-
Band
wid
th
Pro
duct,
fT
(MHz)
10
1
10
2
10
3
10
0
VCE=5V
Collector-Emitter Voltage
-Col
lector
Cu
rrent,
Ic
(A)
Safe Operating Area
Ic(max),DC
Ic(max),Pulse
10m
S
1mS
0.
1m
S
Collector Current, Ic (A)
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
10
0
10
1
10
2
IB=8mA
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R213-016,E
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