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参数资料
| 型号： | 2SB815 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 700 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CP, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 33K |
| 代理商： | 2SB815 |
2SB815 / 2SD1048
No.694-1/3
Features
Ultrasmall package allows miniaturization
in end products.
Large current capacity (IC=0.7A) and low-saturation
voltage.
Specifications
( ) : 2SB815
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)20
V
Collector-to-Emitter Voltage
VCEO
(--)15
V
Emitter-to-Base Voltage
VEBO
(--)5
V
Collector Current
IC
(--)0.7
A
Collector Current (Pulse)
ICP
(--)1.5
A
Collector Dissipation
PC
200
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
--55 to +125
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)15V, IE=0
(--)0.1
A
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)0.1
A
DC Current Gain
hFE1VCE=(--)2V, IC=(--)50mA
(200*)200*
(600*)900*
hFE2VCE=(--)2V, IC=(--)500mA
80
* : The 2SB815, 2SD1048 are classified by 50mA hFE as follows :
Continued on next page.
2SB815
200
B6
400
300
B7
600
2SD1048
200
X6
400
300
X7
600
450
X8
900
Note : Marking : B (2SB815), X (2SD1048)
hFE rank : 6, 7 (2SB815), 6, 7, 8 (2SD1048)
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN694F
Package Dimensions
unit : mm
2018B
[2SB815 / 2SD1048]
41301 TS IM / 91098 HA (KT) / 8258MO / 4017 KI / 2173 KI, TS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
0.4
0.95 0.95
1.9
2.9
0.5
1.5
2.5
0.5
0.16
0 to 0.1
0.8
1.1
2
3
1
2SB815 / 2SD1048
General-Purpose AF Amplifier Applications
PNP / NPN Epitaxial Planar Silicon Transistors
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1048-6 | 700 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1048 | 700 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SB815-7 | 700 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB822/Q | 2000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB911MQ | 2000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB8156 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 700MA I(C) | SOT-23 |
| 2SB815-6-TB-E | 功能描述:两极晶体管 - BJT BIP PNP 0.7A 15V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB8157 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 700MA I(C) | SOT-23 |
| 2SB815-7 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Bipolar Transistor |
| 2SB815-7-TB-E | 功能描述:两极晶体管 - BJT BIP PNP 0.7A 15V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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