参数资料
型号: 2SB834-O-TA3-T
厂商: UNISONIC TECHNOLOGIES CO LTD
元件分类: 功率晶体管
英文描述: 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封装: TO-220, 3 PIN
文件页数: 3/4页
文件大小: 158K
代理商: 2SB834-O-TA3-T
2SB834
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R204-018.D
TYPICAL CHARACTERISTICS
40
0
Temperature, TC (°C)
P
ow
er
D
is
si
pa
tio
n,
P
D
(W
)
100
0
Power Derating
125
150
50
25
10
15
75
5
20
25
30
35
-3.0
-2.0
Collector-Emitter Voltage, VCE (V)
C
ol
le
ct
or
C
ur
re
nt
,I
C
(A
)
-1.0
-3.0
-6.0
-4.0
-5.0
-2.0
-1.0
0
Collector Current vs.
Collector-Emitter Voltage
-20
-30
-40
-50
IB = -10mA
TC=25°C
TO-126/TO-220F
TO-220
300
Collector Current, IC (mA)
D
C
ur
re
nt
C
ai
n,
h
F
E
50
100
-100
-3k
-200
-1k
-20
-2
30
10
DC Current Gain
-5 -10
-50
-500
VCE = 5.0V
-3.0
Base-Emitter Voltage, VBE (V)
C
ol
le
ct
or
C
ur
re
nt
,I
C
(A
)
-2.0
-0.8
-1.6
-1.0
0
-0.4
-1.2
VCE = 5.0V
Collector Current vs.
Base-Emitter Voltage
TC=100°C
25°C
-25°C
-0.4
Collector Current, IC (mA)
C
ol
le
ct
or
-E
m
itt
er
S
at
ur
at
io
n
V
ol
ta
ge
,
V
C
E
(S
A
T
)(
V
)
-0.1
-0.2
-100
-3k
-200
-1k
-20
-2
-0.05
-0.02
Collector-Emitter Saturation Voltage
vs. Collector Current
-5 -10
-50
-500
-2k
-1.0
Common Emitter
IC/IB = 10
-5.0
Collector Emitter Voltage, VCE (V)
C
ol
le
ct
or
C
ur
re
nt
,I
C
(A
)
-1.0
-2.0
-1.0
-0.5
-0.1
Active-Region Safe Operating AREA
(SOA)
-10
100ms
-0.2
10ms
1ms
DC
-10
-100
-5.0
-2.0
-7.0
-20
-70
-50
Bonding Wire Limit
Second Breakdown Limit
Thermally Limited
at TC=25°C(Single Pulse)
TC=100°C
25°C
-25°C
-60
-80
-70
TC=100°C
TC=25°C
TC=-25°C
相关PDF资料
PDF描述
2SB834G-Y-TA3-T 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB834L-Y-T60-K 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
2SB834G-O-T60-K 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
2SB852KT146B 300 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB856 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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