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参数资料
| 型号： | 2SB852KT146/B |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SMT3, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 73K |
| 代理商： | 2SB852KT146/B |
2SB852K / 2SA830S
Transistors
Rev.A
1/3
High-gain Amplifier Transistor (
32V, 0.3A)
2SB852K / 2SA830S
Features
1) Darlington connection for high DC current gain.
2) Built-in 4k
resistor between base and emitter.
3) Complements the 2SD1383K / 2SD1645S.
Circuit diagram
RBE
4k
E : Emitter
B : Base
C : Collector
C
B
E
Packaging specifications
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
2SB852K
SMT3
B
T146
3000
2SA830S
SPT
B
TP
5000
Denotes hFE
U
External dimensions (Unit : mm)
Each lead has same dimensions
2SB852K
(1)Emitter
(2)Base
(3)Collector
(2)
(1)
2.8
1.6
0.4
(3)
2.9
1.9
0.95
0.8
0.15
0.3Min.
1.1
Taping specifications
2SA830S
0.45
2.5
(1) (2) (3)
(15Min.)
5.0
3.0
3Min.
0.45
0.5
4.0
2.0
(1)Emitter
(2)Collector
(3)Base
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
40
32
6
0.3
0.2
2SB852K
2SA830S
0.3
150
55 to +150
Unit
V
A
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
RBE=0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB855 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-220AB -50V -2A 20W BCE |
| 2SB856 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTOR TO -50V -3A 25W BCE |
| 2SB856A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-220AB |
| 2SB856B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-220AB |
| 2SB856C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-220AB |
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