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参数资料
| 型号： | 2SB852KT146 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/3页 |
| 文件大小： | 70K |
| 代理商： | 2SB852KT146 |
2SB852K
Transistors
Rev.B
1/2
High-gain Amplifier Transistor (
32V, 0.3A)
2SB852K
Features
1) Darlington connection for high DC current gain.
2) Built-in 4k
resistor between base and emitter.
3) Complements the 2SD1383K.
Packaging specifications
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
2SB852K
SMT3
B
T146
3000
Denotes hFE
U
External dimensions (Unit : mm)
Each lead has same dimensions
2SB852K
(1)Emitter
(2)Base
(3)Collector
(2)
(1)
2.8
1.6
0.4
(3)
2.9
1.9
0.95
0.8
0.15
0.3Min.
1.1
Circuit diagram
RBE
4k
E : Emitter
B : Base
C : Collector
C
B
E
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
40
32
6
0.3
0.2
150
55 to +150
Unit
V
A
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
RBE=0
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
VCB
= 10V, IE=0A, f=1MHz
fT
200
MHz
VCE
= 5V, IE=10mA, f=100MHz
BVCBO
40
V
IC
= 100A
BVCES
32
V
IC
= 1mA
BVEBO
6
V
IE
= 100A
ICBO
1
AVCB= 24V
IEBO
1
AVEB= 4.5V
VCE(sat)
5000
IC
= 200mA, IB= 0.4mA
hFE
1.5
V
VCE
= 5V, IC= 0.1A
Cob
3
pF
2
1
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
1 Measured using pulse current.
2 Transition frequency of the device.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB852KT146B | 功能描述:达林顿晶体管 DARL PNP 32V 0.3A RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2SB855 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-220AB -50V -2A 20W BCE |
| 2SB856 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTOR TO -50V -3A 25W BCE |
| 2SB856A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-220AB |
| 2SB856B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-220AB |
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