参数资料
型号: 2SB857B
元件分类: 功率晶体管
英文描述: 4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封装: TO-220AB, 3 PIN
文件页数: 4/6页
文件大小: 41K
代理商: 2SB857B
2SB857, 2SB858
2
Electrical Characteristics (Ta = 25°C)
2SB857
2SB858
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–70
–70
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–50
–60
V
I
C = –50 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
–5
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
——–1——–1
AV
CB = –50 V, IE = 0
DC current transfer ratio h
FE1*
1
60
320
60
320
V
CE =I C = –1 A*
2
h
FE2
35
35
–4 V
I
C = –0.1 A*
2
Collector to emitter
saturation voltage
V
CE(sat)
——–1——–1V
I
C = –2 A, IB = –0.2 A*
2
Base to emitter voltage
V
BE
——–1——–1V
V
CE = –4 V, IC = –1 A*
2
Gain bandwidth product f
T
—15
—15
MHz
V
CE = –4 V,
I
C = –0.5 A*
2
Notes: 1. The 2SB857 and 2SB858 are grouped by h
FE1 as follows.
2. Pulse test
BC
D
60 to 120
100 to 200
160 to 320
0
50
100
150
Case Temperature TC (°C)
Collector
power
dissipation
Pc
(W)
Maximum Collector Dissipation Curve
20
40
60
–0.05
–0.1
–0.2
–0.5
–1.0
–2
–5
Collector to emitter Voltage VCE (V)
Collector
Current
I
C
(A)
–1
–2
–5
–10
–20
–50 –100
Area of Safe Operation
IC max (Continuous)
(–10 V, –4 A)
TC = 25°C
DC
Operation
(–50 V, –0.24 A)
(–20 V, –2 A)
2SB857
2SB858
(–60
V,
–0.15
A)
相关PDF资料
PDF描述
2SB861B 2 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SC2547D 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SC2547E 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SC2547 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SC3336 15 A, 400 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
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