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参数资料
| 型号： | 2SB858C |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 29K |
| 代理商： | 2SB858C |
2SB857, 2SB858
Silicon PNP Triple Diffused
ADE-208-859 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SB857
2SB858
Unit
Collector to base voltage
V
CBO
–70
V
Collector to emitter voltage
V
CEO
–50
–60
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–4
A
Collector peak current
I
C(peak)
–8
A
Collector power dissipation
P
C*
1
40
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. Value at T
C = 25°C
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB857B | 4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB857 | 4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB905(2-7B2A) | 1500 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB905-Y(2-7B2A) | 1500 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB905-O(2-7B2A) | 1500 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB858C-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB858D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB859 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB859B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB859C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
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