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参数资料
| 型号： | 2SB859B |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 28K |
| 代理商： | 2SB859B |
2SB859
Silicon PNP Triple Diffused
ADE-208-860 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary pair with 2SD1135
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
–100
V
Collector to emitter voltage
V
CEO
–80
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–4
A
Collector peak current
I
C(peak)
–8
A
Collector power dissipation
P
C*
1
40
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. Value at T
C = 25°C
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB859C | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB860-E | 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB861C | 2 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB863O | 10 A, 140 V, PNP, Si, POWER TRANSISTOR |
| 2SB874C | 2 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB859C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB860 | 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SB861 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 制造商:Hitachi 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB |
| 2SB861B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SB861C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
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