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参数资料
| 型号： | 2SB904Q |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 20 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-218 |
| 封装： | TO-3PB, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 37K |
| 代理商： | 2SB904Q |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
30V/12A High-Speed Switching Applications
Ordering number:ENN1022A
2SB904/2SD1213
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1503TN (KT)/92098HA (KT)/4067KI/D152KI, TS No.1022–1/4
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( ) : 2SB904
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2022A
[2SB904/2SD1213]
Applications
Large current switching of relay drivers, high-speed
inverters, converters.
Features
Low collector-to-emitter saturation voltage :
VCE(sat)=–0.5V (PNP), 0.4V (NPN) max.
Large current capacity.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Tc=25C
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* : The 2SB904/2SD1213 are classified as follows according to hFE at 1A.
Continued on next page.
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相关PDF资料 |
PDF描述 |
|---|---|
| 2SB904 | 20 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-218 |
| 2SB904R | 20 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-218 |
| 2SD1213 | 20 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 2SD1213 | 20 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 2SD1213S | 20 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-218 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB904R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 20A I(C) | TO-247VAR |
| 2SB904S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 20A I(C) | TO-247VAR |
| 2SB905 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TRANSISTOR (POWER AMPLIFIER APPLICATIONS) |
| 2SB905_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Power Amplifier Applications |
| 2SB905_10 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Power Amplifier Applications |
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