参数资料
型号: 2SB906Y(2-7J1A)
元件分类: 小信号晶体管
英文描述: 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: LEAD FREE, 2-7J1A, 3 PIN
文件页数: 1/4页
文件大小: 160K
代理商: 2SB906Y(2-7J1A)
2SB906
2006-11-21
1
TOSHIBA Transistor Silicon PNP Diffused Type (PCT process)
2SB906
Audio Frequency Power Amplifier Application
Low collector saturation voltage
: VCE (sat) = 1.0 V (typ.) (IC = 3 A, IB = 0.3 A)
High power dissipation: PC = 20 W (Tc = 25°C)
Complementary to 2SD1221
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
3
A
Base current
IB
0.5
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
相关PDF资料
PDF描述
2SB906(2-7J1A) 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB906Y(2-7B1A) 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB906(2-7B1A) 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB906O(2-7B1A) 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB907(2-7B2A) 3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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