参数资料
型号: 2SB907
元件分类: 小信号晶体管
英文描述: 3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件页数: 1/5页
文件大小: 166K
代理商: 2SB907
2SB907
2006-11-21
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SB907
Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Power Amplifier Applications
High DC current gain: hFE (1) = 2000 (min) (VCE = 2 V, IC = 1 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A)
Complementary to 2SD1222.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
3
A
Base current
IB
0.3
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
15
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
BASE
EMITTER
≈ 4.8 k
≈ 300
COLLECTOR
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