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参数资料
| 型号： | 2SB929A |
| 英文描述： | Power Device - Power Transistors - General-Purpose power amplification |
| 中文描述： | 功率器件-功率晶体管-通用功率放大 |
| 文件页数： | 1/3页 |
| 文件大小： | 84K |
| 代理商： | 2SB929A |
Power Transistors
1
Publication date: February 2003
SJD00010BED
2SB0928 (2SB928), 2SB0928A (2SB928A)
Silicon PNP epitaxial planar type
For Power amplification
For TV vertical deflection output
Complementary to 2SD1250 and 2SD1250A
■ Features
High collector-emitter voltage (Base open) V
CEO
High collector power dissipation P
C
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings T
C
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
200
V
Collector-emitter voltage 2SB0928
VCEO
150
V
(Base open)
2SB0928A
180
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
2A
Peak collector current
ICP
3A
Collector power
PC
30
W
dissipation
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 500 A, IE = 0
200
V
Collector-emitter voltage
2SB0928
VCEO
IC = 5 mA, IB = 0
150
V
(Base open)
2SB0928A
180
Emitter-base voltage (Collector open)
VEBO
IE = 500 A, IC = 0
6V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 200 V, IE = 0
50
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 4 V, I
C
= 0
50
A
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 150 mA
60
240
hFE2
VCE = 10 V, IC = 400 mA
50
Base-emitter voltage
VBE
VCE
= 10 V, I
C
= 400 mA
1.0
V
Collector-emitter saturation voltage
VCE(sat)
IC = 500 mA, IB = 50 mA
1.0
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
40
MHz
■ Electrical Characteristics T
C = 25°C ± 3°C
Unit : mm
Rank
Q
P
hFE1
60 to 140
100 to 240
Note) The part numbers in the parenthesis show conventional part number.
8.5±0.2
3.4±0.3
1.0±0.1
0 to 0.4
6.0±0.2
0.8±0.1 R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
(8.5)
(6.5)
(6.0)
1.3
(1.5)
(7.6)
2.54±0.3
1.4±0.1
5.08±0.5
123
1.5
±
0.1
2.0
±
0.5
10.0
±
0.3
1.5
+0 –0.4
3.0
+0.4 –0.2
4.4
±
0.5
4.4
±0
.5
14.4
±
0.5
Note) Self-supported type package is also prepared
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB0930 | Power Device - Power Transistors - General-Purpose power amplification |
| 2SB930 | Power Device - Power Transistors - General-Purpose power amplification |
| 2SB0930A | Power Device - Power Transistors - General-Purpose power amplification |
| 2SB930A | Power Device - Power Transistors - General-Purpose power amplification |
| 2SB0931 | Power Device - Power Transistors - General-Purpose power amplification |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB929AP | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-262VAR |
| 2SB929APQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-262VAR |
| 2SB929AQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-262VAR |
| 2SB929AR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-221VAR |
| 2SB929P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-262VAR |
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