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参数资料
| 型号： | 2SB935AQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 封装： | N-TYPE PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 174K |
| 代理商： | 2SB935AQ |
1
Power Transistors
2SB935, 2SB935A
Silicon PNP epitaxial planar type
For low-voltage switching
s Features
q
Low collector to emitter saturation voltage VCE(sat)
q
High-speed switching
q
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–40
–50
–20
–40
–5
–15
–10
35
1.3
150
–55 to +150
Unit
V
A
W
C
2SB935
2SB935A
2SB935
2SB935A
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2
*
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
Conditions
VCB = –40V, IE = 0
VCB = –50V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –2A
IC = –7A, IB = – 0.23A
VCE = –10V, IC = – 0.5A, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
IC = –2A, IB1 = –66mA, IB2 = 66mA
min
–20
–40
45
90
typ
150
200
0.1
0.5
0.1
max
–50
260
– 0.6
–1.5
Unit
A
V
MHz
pF
s
2SB935
2SB935A
2SB935
2SB935A
*h
FE2 Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±0.2
6.0
±0.5
10.0
±0.3
10.5min.
2.0
1.5
±0.1
1.5max.
0.8
±0.1
5.08
±0.5
2.54
±0.3
1.1max.
0.5max.
1.0
±0.1
3.4
±0.3
2
13
Unit: mm
8.5
±0.2
4.4
±0.5
2.0
10.0
±0.3
14.7
±0.5
4.4
±0.5
6.0
±0.3
3.4
±0.3
2.54
±0.3
5.08
±0.5
1.0
±0.1
0.8
±0.1
1.5
+0
–0.4
3.0
+0.4
–0.2
0 to 0.4
1.1 max.
R0.5
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB935AP | 10 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 2SB936Q | 10 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 2SB0936P | 10 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 2SB0936Q | 10 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 2SB0936AP | 10 A, 40 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB935AR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-221VAR |
| 2SB935P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | TO-221VAR |
| 2SB935Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | TO-221VAR |
| 2SB935R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | TO-221VAR |
| 2SB936 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Low-Voltage Switching |
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