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参数资料
| 型号： | 2SB936P |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 253K |
| 代理商： | 2SB936P |
Power Transistors
1
Publication date: April 2003
SJD00017BED
2SB0936 (2SB936), 2SB0936A (2SB936A)
Silicon PNP epitaxial planar type
For low-voltage switching
■ Features
Low collector-emitter saturation voltage V
CE(sat)
High-speed switching
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings T
C = 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB0936
VCBO
40
V
(Emitter open)
2SB0936A
50
Collector-emitter voltage 2SB0936
VCEO
20
V
(Base open)
2SB0936A
40
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
10
A
Peak collector current
ICP
20
A
Collector power dissipation
PC
40
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB0936
VCEO
IC = 10 mA, IB = 0
20
V
(Base open)
2SB0936A
40
Collector-base cutoff
2SB0936
ICBO
VCB =
40 V, I
E = 0
50
A
current (Emitter open)
2SB0936A
VCB = 50 V, IE = 0
50
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
50
A
Forward current transfer ratio
hFE1 *
VCE
= 2 V, I
C
= 0.1 A
45
hFE2
VCE = 2 V, IC = 3 A
90
260
Base-emitter voltage
VBE(sat)
IC = 10 A, IB = 0.33 A
1.5
V
Collector-emitter saturation voltage
VCE(sat)
IC
= 10 A, I
B
= 0.33 A
0.6
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
100
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
400
pF
(Common base, input open circuited)
Turn-on time
ton
IC
= 3 A,
0.1
s
Storage time
tstg
IB1 = 0.1 A, IB2 = 0.1 A
0.5
s
Fall time
tf
VCC = 20 V
0.1
s
8.5±0.2
3.4±0.3
1.0±0.1
0 to 0.4
6.0±0.2
0.8±0.1 R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
(8.5)
(6.5)
(6.0)
1.3
(1.5)
(7.6)
2.54±0.3
1.4±0.1
5.08±0.5
123
1.5
±
0.1
2.0
±
0.5
10.0
±
0.3
1.5
+0 –0.4
3.0
+0.4 –0.2
4.4
±
0.5
4.4
±0
.5
14.4
±
0.5
Rank
Q
P
hFE1
90 to 180
130 to 260
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB936-PQ | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB936Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-262VAR |
| 2SB936R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | TO-221VAR |
| 2SB937 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Si PNP EPITAXIAL PLANAR |
| 2SB937A | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Power Amplification And Switching |
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